OxideAsSemi.par

Region = "OxideAsSemiconductor_1" {

Epsilon
{ *  Ratio of the permittivities of material and vacuum

  * epsilon() = epsilon
	epsilon	= 3.9	# [1]
}


Epsilon_aniso
{ *  Ratio of the permittivities of material and vacuum

  * epsilon() = epsilon
	epsilon	= 3.9	# [1]
}


RefractiveIndex
{ *  Optical Refractive Index

  * refractiveindex() = refractiveindex * (1 + alpha * (T-Tpar))
	Tpar	= 3.0000e+02	# [K]
	refractiveindex	= 1.46	# [1]
	alpha	= 2.0000e-04	# [1/K]

  * Gain dependence of refractive index in active region:
  * a) Linear model: delta n = a0 * ( (n+p)/2 - N0 )
  * b) Logarithmic model: delta n = a0 * log ( (n+p)/(2 * N0) )
  * where n/p are the carrier densities in the active region. 
	a0	= 0.0000e+00	# [cm^3 or 1]
	N0	= 1.0000e+18	# [1/cm^3]
}


ComplexRefractiveIndex
{ *  Complex refractive index model: n_complex = n + i*k (unitless)
  *  
  *  with n = n_0 + delta_n_lambda + delta_n_T + delta_n_carr + delta_n_gain 
  *       k = k_0 + delta_k_lambda             + delta_k_carr                
  
  * Base refractive index and extinction coefficient: 
  *    n_0, k_0 
  
  * Wavelength dependence (real and imag): 
  *    Formula 0: delta_n_lambda = Cn_lambda * lambda + Dn_lambda * lambda^2 
  *               delta_k_lambda = Ck_lambda * lambda + Dk_lambda * lambda^2 
  *    Formula 1: Read tabulated values 
  *               NumericalTable (...)  
  *    Formula 2: Read tabulated values from file 
  *               NumericalTable = <string> 
  *    Formula 3: Read tabulated values from ODB Table 
  
  * Temperature dependence (real): 
  *    delta_n_T = n_0 * ( Cn_temp * (T-Tpar)) 
  
  * Carrier dependence (real) 
  *    delta_n_carr = - Cn_carr * (const.) * (n/m_e + p/m_h) 
  
  * Carrier dependence (imag) 
  *    delta_k_carr = 1 / (4*PI) * (wavelength^Gamma_k_carr_e*Ck_carr_e*n + wavelength^Gamma_k_carr_h*Ck_carr_h*p) 
  
  * Gain dependence (real) 
  *    lin: delta_n_gain = Cn_gain * ( (n+p)/2 - Npar ) 
  *    log: delta_n_gain = Cn_gain * log ( (n+p)/(2 - Npar ) )
	n_0	= 1.46	# [1]
	k_0	= 0.0000e+00	# [1]
	Cn_lambda	= 0.0000e+00	# [um^-1]
	Dn_lambda	= 0.0000e+00	# [um^-2]
	Ck_lambda	= 0.0000e+00	# [um^-1]
	Dk_lambda	= 0.0000e+00	# [um^-2]
	Cn_temp	= 2.0000e-04	# [K^-1]
	Cn_carr	= 1	# [1]
	Ck_carr	= 0.0000e+00 ,	0.0000e+00	# [cm^2]
	Gamma_k_carr	= 1 ,	1	# [1]
	Cn_gain	= 0.0000e+00	# [cm^3]
	Npar	= 1.0000e+18	# [cm^-3]
       Formula = 0
	Tpar	= 3.0000e+02	# [K]
} 


* SpectralConversion
* { * Spectral Conversion Model
*   No default model, user has to define.
*   All wavelength parameters should be in nanometers.
*   Choice of Analytic or NumericalTable selected in Physics section of region
*  
*   ConversionEfficiency = float     * ratio of absorbed photons that are reemitted.
*   AbsorptionScaling = float        * scale absorption
*   EmissionScaling = float          * scale emission
*   Analytic (
*     AbsorptionProfile = (
*        Gaussian(lambda0 sigma peakvalue dc_offset lambda_range0 lambda_range1)
*        Lorentzian(lambda0 width peakvalue dc_offset lambda_range0 lambda_range1)
*        ...
*     )
*     EmissionProfile = (
*        Gaussian(lambda0 sigma peakvalue dc_offset lambda_range0 lambda_range1)
*        Lorentzian(lambda0 width peakvalue dc_offset lambda_range0 lambda_range1)
*        ...
*     )
*   )
*   NumericalTable (
*     AbsorptionProfile = (
*        lambda0 value0
*        lambda1 value1
*        ...
*     )
*     EmissionProfile = (
*        lambda0 value0
*        lambda1 value1
*        ...
*     )

*   ConversionEfficiency = 1.0
* }


LatticeHeatCapacity
{ *  lumped electron-hole-lattice heat capacity

  * cv() = cv + cv_b * T + cv_c * T^2 + cv_d * T^3 
	cv	= 1.67	# [J/(K cm^3)]
	cv_b	= 0.0000e+00	# [J/(K^2 cm^3)]
	cv_c	= 0.0000e+00	# [J/(K^3 cm^3)]
	cv_d	= 0.0000e+00	# [J/(K^4 cm^3)]
}


Kappa
{ *  Lattice thermal conductivity

  * Formula = 1:
  * kappa() = kappa + kappa_b * T + kappa_c * T^2 
	kappa	= 0.014	# [W/(K cm)]
	kappa_b	= 0.0000e+00	# [W/(K^2 cm)]
	kappa_c	= 0.0000e+00	# [W/(K^3 cm)]
}


Kappa_aniso
{ *  Lattice thermal conductivity

  * Formula = 1:
  * kappa() = kappa + kappa_b * T + kappa_c * T^2 
	kappa	= 0.014	# [W/(K cm)]
	kappa_b	= 0.0000e+00	# [W/(K^2 cm)]
	kappa_c	= 0.0000e+00	# [W/(K^3 cm)]
}

Bandgap
{ * Eg = Eg0 + alpha Tpar^2 / (beta + Tpar) - alpha T^2 / (beta + T)
  * Parameter 'Tpar' specifies the value of lattice 
  * temperature, at which parameters below are defined
  * Chi0 is electron affinity.
	Chi0	= 0.9	# [eV]
	Eg0	= 9	# [eV]
	alpha	= 0.0000e+00	# [eV K^-1]
	beta	= 0.0000e+00	# [K]
	alpha2	= 0.0000e+00	# [eV K^-1]
	beta2	= 0.0000e+00	# [K]
	EgMin	= -1.0000e+01	# [eV]
	dEgMin	= 0.0000e+00	# [eV]
	Tpar	= 0.0000e+00	# [K]
}

FreeCarrierAbsorption
{
  * Coefficients for free carrier absorption:
  * fcaalpha_n for electrons,
  * fcaalpha_p for holes

  * FCA = (alpha_n * n + alpha_p * p) * Light Intensity
	fcaalpha_n	= 4.0000e-18	# [cm^2]
	fcaalpha_p	= 8.0000e-18	# [cm^2]
}

QWStrain
{
  * Zincblende crystals:
  *   Parameters: a_nu, a_c, b, C_12, C_11
  *   StrainConstant eps (formula = 1) or lattice constant
  *   a0 (formula = 2) for energy shift of quantum-well
  *   subbands.
  *   a0(T) = a0 + alpha (T-Tpar)

  * Wurtzite crystals:
  *   Parameters: a_c, D1, D2, D3, D4, C_13, C_33
  *   Lattice constants a0 and c0 (formula 2 must be used)
  *   a0(T) = a0 + alpha (T-Tpar)
  *   c0(T) = c0 + alpha (T-Tpar)

	  * Default formula	= 1	# [1]
	eps	= 0.0000e+00	# [1]
	a0	= 3.1890e-10	# [cm]
	alpha	= 0.0000e+00	# [cm/K]
	Tpar	= 3.0000e+02	# [K]
	a_nu	= 0.0000e+00	# [eV]
	a_c	= -4.0800e+00	# [eV]
	b_shear	= 0.0000e+00	# [eV]
	c_11	= 0.0000e+00	# [1e-2 GPa]
	c_12	= 0.0000e+00	# [1e-2 GPa]
	d1	= -8.9000e-01	# [eV]
	d2	= 4.27	# [eV]
	d3	= 5.18	# [eV]
	d4	= -2.5900e+00	# [eV]
	c_13	= 1	# [1e-2 GPa]
	c_33	= 3.92	# [1e-2 GPa]
	c0	= 5.1850e-10	# [cm]
}

eDOSMass
{
  * For effective mass specificatition Formula1 (me approximation):
  * or Formula2 (Nc300) can be used :
	Formula	= 1	# [1]
  * Formula1:
  * me/m0 = [ (6 * mt)^2 *  ml ]^(1/3) + mm
  * mt = a[Eg(0)/Eg(T)] 
  * Nc(T) = 2(2pi*kB/h_Planck^2*me*T)^3/2 = 2.540e19 ((me/m0)*(T/300))^3/2 
	a	= 0.0000e+00	# [1]
	ml	= 0.0000e+00	# [1]
	mm	= 0.42	# [1]
}

hDOSMass
{
  * For effective mass specificatition Formula1 (mh approximation):
  * or Formula2 (Nv300) can be used :
	Formula	= 1	# [1]
  * Formula1:
  * mh =  m0*{[(a+bT+cT^2+dT^3+eT^4)/(1+fT+gT^2+hT^3+iT^4)]^(2/3) + mm}
  * Nv(T) = 2(2pi*kB/h_Planck^2*mh*T)^3/2 = 2.540e19 ((mh/m0)*(T/300))^3/2 
	a	= 0	# [1]
	b	= 0	# [K^-1]
	c	= 0	# [K^-2]
	d	= 0	# [K^-3]
	e	= 0	# [K^-4]
	f	= 0	# [K^-1]
	g	= 0	# [K^-2]
	h	= 0	# [K^-3]
	i	= 0	# [K^-4]
	mm	= 1	# [1]
}

SchroedingerParameters:
{ * For the hole masses for Schroedinger equation you can
  * use different formulas.
  * 0: use the isotropic density of states effective mass
  * 1: (for materials with Si-like hole band structure)
  *    m(k)/m0=1/(A+-sqrt(B+C*((xy)^2+(yz)^2+(zx)^2)))
  *    where k=(x,y,z) is unit normal vector in reziprocal
  *    space.  '+' for light hole band, '-' for heavy hole band
  * 2: Heavy hole mass mh and light hole mass ml are
  *    specified explicitly.
  *    Use me as electron mass for free-carrier effect in 
  *    the refractive index model.
  * For electron masses, the following formula options exist:
  * 0: use the isotropic density of states effective mass
  * 1: (for materials with Si-like hole band structure)
  *    use the a, ml, and mm parameters from eDOSMass.
  *    Typically, this leads to anisotropy.
  * formula<0 means no default model and no default parameters
  *   are available, so you have to provide values for
  *   'formula' and the respective parameters in order to use
  *   this parameter set.
	formula	= 0 ,	2	# [1]
  * Formula(hole) 2 parameters:
	ml	= 0.629961	# [1]
	mh	= 0.629961	# [1]
	me	= 0.07	# [1]
  * Lifting of degeneracy of bulk valleys. The value for
  * electrons is added to the band edge for the subband
  * ladder of lower degeneracy if positive, and subtracted
  * from the band edge for the ladder of higher degeneracy
  * if negative. (that is, the value of the band edge is
  * always increased).  For holes, the value is subtracted from
  * the band edge for the heavy hole band is positive,
  * add added tp that of the light hole band if
  * negative.  The signs are such that the shift always
  * moves the band edges 'outward', away from midgap.  The
  * gap itself is defined as the separation of the
  * unshifted band edges and remains unaffected.
	offset	= 0.0000e+00 ,	0.0000e+00	# [eV]
  * Alternative to the specification of formula, offset,
  * and masses, you can make an arbitrary number of ladder
  * specification, 'eLadder(mz, mxy, deg, dE) and hLadder(...)
  * Here, mz is the quantization mass, mxy an in-plane DOS mass,
  * deg the ladder degeneracy, and dE an shift of the band edge
  * for the ladder (non-negative; the shift is always outward,
  * away from midgap).  When present, we solve the Schroedinger
  * equation separately for each ladder

  * Temperatures in rescaling of the mxy for eLadder and hLadder
	ShiftTemperature	= 1.0000e+10 ,	1.0000e+10	# [K]
}

QuantumPotentialParameters
{ * gamma:  weighting factor for quantum potential
  * theta:  weight for quadratic term
  * xi:     weight for quasi Fermi potential
  * eta:    weight for electrostatic potential
  * nu :    weight for DOS mass change from stress
	gamma	= 1 ,	1	# [1]
	theta	= 0.5 ,	0.5	# [1]
	xi	= 1 ,	1	# [1]
	eta	= 1 ,	1	# [1]
	nu	= 0.0000e+00 ,	0.0000e+00	# [1]
}

ConstantMobility:
{ * mu_const = mumax (T/T0)^(-Exponent)
	mumax	= 20 ,	1e-5	# [cm^2/(Vs)]
	Exponent	= 2.5 ,	2.2	# [1]
	mutunnel	= 0.05 ,	0.05	# [cm^2/(Vs)]
}

ConstantMobility_aniso:
{ * mu_const = mumax (T/T0)^(-Exponent)
	mumax	= 0.05 ,	1	# [cm^2/(Vs)]
	Exponent	= 2.5 ,	2.2	# [1]
	mutunnel	= 0.05 ,	0.05	# [cm^2/(Vs)]
}

PooleFrenkel
{ * TrapXsection = Xsec0*(1+Gpf) 
  * Gpf = (1+(a-1)*exp(a))/a^2-0.5 
  * where 
  *       a = (1/kT)*(q^3*F/pi/e0/epsPF)^0.5, 
  *       F is the electric field. 
	epsPF	= 3.9 ,	3.9	# [1]
}

RadiativeRecombination * coefficients:
{ * R_Radiative = C * (T/Tpar)^alpha * (n p - ni_eff^2)
  * C    
  * alpha 
	C	= 0.0000e+00	# [cm^3/s]
	alpha	= 0.0000e+00	# []
}

Radiation
{ * G = g * D * ((E+E0)/(E+E1))^m  -  the generation term, 
  *  where E is the electric field, 
  *        E0, E1, m are constants to account the recombination, 
  *        g is the electron-hole creation rate , 
  *        D is the dose rate defined in the input file. 
	g	= 7.6000e+12	# [1/(rad*cm^3)]
	E0	= 0.1	# [V/cm]
	E1	= 1.3500e+06	# [V/cm]
	m	= 0.9	# [1]
}

Traps
{ 
  *     G is degeneracy factor 
	G	= 1 ,	1	# [1]

  *     XsecFormula=1: Xsec(F) = Xsec 
  *     XsecFormula=2: Xsec(F) = Xsec*(1+a1*(F/F0)^p1+a2*(F/F0)^p2)^p0, F0 = 1 V/cm 
  *     XsecFormula=3: Xsec(F) = Xsec*(1+Gt), Gt is Hurkx TATunneling factor 
  *     XsecFormula=4: Xsec(F) = Xsec*(1+Gpf), Gpf is Poole-Frenkel factor 
  *     XsecFormula=5: Xsec(F) = Nasyrov model 
	XsecFormula	= 2 ,	 2	# [1]
	Xsec	= 1.0000e-12 ,	6.8000e-14	# [cm^2]
	a1	= 0.0000e+00 ,	0.0000e+00	# [1]
	p1	= 1 ,	1	# [1]
	a2	= 0.0000e+00 ,	0.0000e+00	# [1]
	p2	= 1 ,	1	# [1]
	p0	= 1 ,	1	# [1]

  *     VthFormula=1: Vth(T) = Vth*(T/300)^1/2 
  *     VthFormula=2: Vth(T) = (3*k*T/m_300)^1/2, 
  *                            m_300 is DOS mass calculated at T=300 
	VthFormula	= 1 ,	1	# [1]
	Vth	= 2.0420e+07 ,	1.5626e+07	# [cm/s]
	Jcoef	= 1.0000e+00 ,	1.0000e+00	# [1]

  *     Tunneling to traps is determined by the interaction volume
  *     TrapVolume, the Huang-Rhys factor, and the Phonon energy.
	TrapVolume	= 0.0000e+00	# [um^3]
	HuangRhys	= 0.0000e+00	# [1]
	PhononEnergy	= 0.0000e+00	# [eV]
	alpha	= 1	# [1]

  *     Constant emission rate term
	ConstEmissionRate	= 0.0000e+00 ,	0.0000e+00	# [1/s]


}

	BarrierTunneling "NLM" {
	mt = 1 , 1 
	g = 1 , 1 
	}

	BarrierTunneling "NLM2" {
	mt = 1 , 1 
	g = 1 , 1 
	}

}

Region="Silicon_1" {
	BarrierTunneling "NLM2" {
	mt = 1 , 1 
	g = 1 , 1 
	}
}
Region="Silicon_2" {
	BarrierTunneling "NLM" {
	mt = 1 , 1
	g = 1 , 1 
	}
}


RegionInterface = "OxideAsSemiconductor_1/Silicon_1" {
ThermionicEmission {
	A = 2, 2 # [1]
	B = 4, 4 # [1]
	C = 1, 1 # [1]
}
}

RegionInterface = "OxideAsSemiconductor_1/Silicon_2" {
ThermionicEmission {
	A = 2, 2 # [1]
	B = 4, 4 # [1]
	C = 1, 1 # [1]
}
}