update: use new references style

lang/en/docs/tutorials/materials/specific/heterostructure-silicon-silicon-dioxide-hafnium-dioxide-titanium-nitride.md

@@ -203,15 +203,5 @@ The following JupyterLite notebook demonstrates the process of creating target m
 
 ## References.
 
-1. [QuantumATK tutorial](https://docs.quantumatk.com/tutorials/hkmg_builder/hkmg_builder.html)
-
-2. **D. A. Muller et al.**
-    "The electronic structure at the atomic scale of ultrathin gate oxides"
-    Nature 399, 758–761 (1999)
-    [DOI: 10.1038/21602](https://doi.org/10.1038/21602)
-
-3. **J. Robertson**
-    "High dielectric constant gate oxides for metal oxide Si transistors"
-    Reports on Progress in Physics 69, 327 (2006)
-    [DOI: 10.1088/0034-4885/69/2/R02](https://doi.org/10.1088/0034-4885/69/2/R02)
+Cite the following works: [@Muller1999; @Robertson2006], [QuantumATK tutorial](https://docs.quantumatk.com/tutorials/hkmg_builder/hkmg_builder.html)
 

lang/en/docs/tutorials/materials/specific/interface-2d-2d-graphene-boron-nitride.md

@@ -22,7 +22,7 @@ This tutorial demonstrates the process of creating interfaces with different sta
     **Jeil Jung, Ashley M. DaSilva, Allan H. MacDonald & Shaffique Adam**
     **Origin of the band gap in graphene on hexagonal boron nitride**
     Nature Communications volume 6, Article number: 6308 (2015)
-    [DOI: 10.1038/ncomms7308](https://doi.org/10.1038/ncomms7308)
+    [DOI: 10.1038/ncomms7308](https://doi.org/10.1038/ncomms7308) [@Jung2015; @Novoselov2016; @Gupta2024]
 
 
 We use the [Materials Designer](../../../materials-designer/overview.md) to create interfaces and shift the layers along the y-axis to achieve different stacking configurations.
@@ -160,21 +160,3 @@ The interactive JupyterLite notebook for creating Gr/h-BN interface can be acces
 
 ## References.
 
-1. **Jeil Jung, Ashley M. DaSilva, Allan H. MacDonald & Shaffique Adam**
-
-    "Origin of the band gap in graphene on hexagonal boron nitride"
-    Nature Communications volume 6, Article number: 6308 (2015)
-    [DOI: 10.1038/ncomms7308](https://doi.org/10.1038/ncomms7308)
-
-2. **K. S. Novoselov, A. Mishchenko, A. Carvalho, A. H. Castro Neto**
-
-    "2D materials and van der Waals heterostructures"
-    Science 353, 6298 (2016)
-    [DOI: 10.1126/science.aac9439](https://doi.org/10.1126/science.aac9439)
-
-3. **Neelam Gupta, Saurav Sachin, Puja Kumari, Shivani Rania and Soumya Jyoti Ray**
-
-    "Twistronics in two-dimensional transition metal dichalcogenide (TMD)-based van der Waals interface"
-    RSC Adv., 2024, 4, 1-10
-    [DOI: 10.1039/D3RA06559F](https://doi.org/10.1039/D3RA06559F)
-

lang/en/docs/tutorials/materials/specific/interface-3d-3d-copper-silicon-dioxide.md

@@ -24,8 +24,7 @@ This tutorial demonstrates the process of creating interfaces between 3D materia
     **Shan, T.-R., Devine, B. D., Phillpot, S. R., & Sinnott, S. B.** 
     "Molecular dynamics study of the adhesion of Cu/SiO2interfaces using a variable-charge interatomic potential."
     Physical Review B, 83(11). 
-    [DOI: 10.1103/PhysRevB.83.115327](https://doi.org/10.1103/PhysRevB.83.115327) 
-
+    [DOI: 10.1103/PhysRevB.83.115327](https://doi.org/10.1103/PhysRevB.83.115327) [@Shan2011].
 
 We use the [Materials Designer](../../../materials-designer/overview.md) to create interfaces between Cu and Cristobalite with different termination pairs.
 
@@ -142,8 +141,3 @@ The interactive JupyterLite notebook for creating interfaces between Copper and
 {% endwith %}
 
 ## References.
-
-1. Shan, T.-R., Devine, B. D., Phillpot, S. R., & Sinnott, S. B. (2011). 
-    Molecular dynamics study of the adhesion of Cu/SiO2interfaces using a variable-charge interatomic potential. Physical Review B, 83(11). 
-    [DOI: 10.1103/PhysRevB.83.115327](https://doi.org/10.1103/PhysRevB.83.115327)
-